Publications (Weber, Krieger, Malzer)

Publications of the Weber, Krieger and Malzer group

Fuchs A., Lehmeyer J., Junkes H., Weber HB., Krieger M.:
NOMAD CAMELS: Configurable Application for Measurements, Experiments and Laboratory Systems
In: Journal of Open Source Software (2024)
ISSN: 2475-9066
DOI: 10.21105/joss.06371
URL: https://joss.theoj.org/papers/10.21105/joss.06371
BibTeX: Download
Lehmeyer J., Fuchs A., Li Z., Bornträger T., Candolfi F., Schober M., Fischer M., Hartmann M., Neu E., Bockstedte M., Krieger M., Weber HB.:
Optical and electrical studies on the TS defect in 4H-SiC
In: Journal of Physics D-Applied Physics 58 (2024), Article No.: 015105
ISSN: 0022-3727
DOI: 10.1088/1361-6463/ad7bc5
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Dolle C., Oestreicher V., Ruiz AM., Kohring M., Garnes-Portolés F., Wu M., Sánchez-Santolino G., Seijas-Da Silva A., Alcaraz M., Eggeler YM., Spiecker E., Canet-Ferrer J., Leyva-Perez A., Weber HB., Varela M., Baldoví JJ., Abellán G.:
Hexagonal Hybrid Bismuthene by Molecular Interface Engineering
In: Journal of the American Chemical Society 145 (2023), p. 12487–12498
ISSN: 0002-7863
DOI: 10.1021/jacs.2c13036
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Hochreiter A., Möller M-., Groß F., Krieger M., Weber HB.:
Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
In: Scientific Reports 13 (2023), Article No.: 19086
ISSN: 2045-2322
DOI: 10.1038/s41598-023-46110-2
URL: https://www.nature.com/articles/s41598-023-46110-2
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Kodolitsch E., Kabakow A., Sodan ., Krieger M., Weber HB., Tsavdaris N.:
Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs)
In: Journal of Physics D: Applied Physics 56 (2023), Article No.: 315101
ISSN: 0022-3727
DOI: 10.1088/1361-6463/acd127
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Kodolitsch E., Kabakow A., Sodan V., Krieger M., Weber HB., Tsavdaris N.:
Structural investigation of triangular defects in 4H-SiC epitaxial layers as nucleation source for bar shaped stacking faults (BSSFs)
In: Journal of Physics D-Applied Physics 56 (2023), p. 315101
ISSN: 0022-3727
DOI: 10.1088/1361-6463/acd127
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Lehmeyer J., Citak T., Weber HB., Krieger M.:
Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques
In: Electronics Letters (2023), Article No.: e12752
ISSN: 0013-5194
DOI: 10.1049/ell2.12752
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Lehmeyer J., Fuchs A., Bornträger T., Popp MA., Weber HB., Krieger M.:
Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiC
In: Defect and Diffusion Forum 426 (2023), p. 17-21
ISSN: 1012-0386
DOI: 10.4028/p-02xh85
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Mansour AE., Rotheray L., Helbig K., Botti S., Weber HB., Aeschlimann M., Draxl C.:
FAIRmat Guide to Writing Data Management Plans A Practical Guide for the Condensed-Matter Physics and Materials-Science Communities
1st Conference on Research Data Infrastructure (CoRDI) (Karlsruhe, Germany, September 11, 2023 - September 15, 2023)
DOI: 10.52825/cordi.v1i.378
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Scheidgen M., Brückner S., Brockhauser S., Ghiringhelli LM., Dietrich F., Mansour AE., Marquez JA., Albrecht M., Weber HB., Botti S., Aeschlimann M., Draxl C.:
FAIR Research Data With NOMAD FAIRmat's Distributed, Schema-based Research-data Infrastructure to Harmonize RDM in Materials Science
1st Conference on Research Data Infrastructure (CoRDI) (Karlsruhe, Germany, September 11, 2023 - September 15, 2023)
DOI: 10.52825/cordi.v1i.376
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Schober M., Jungwirth N., Kobayashi T., Lehmeyer J., Krieger M., Weber HB., Bockstedte M.:
The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
In: Defect and Diffusion Forum 426 (2023), p. 43-48
ISSN: 1012-0386
DOI: 10.4028/p-90qste
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Weber HB., Brockhauser S., Koch CT., Rettig L., Aeschlimann M., Hetaba W., Grundmann M., Kühbach M., Krieger M.:
Research Data Management for Experiments in Solid-State Physics: Concepts
1st Conference on Research Data Infrastructure (Karlsruhe, September 11, 2023 - September 15, 2023)
DOI: 10.52825/CoRDI.v1i.283
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Bao L., Zhao B., Ali M., Assebban M., Yang B., Kohring M., Ryndyk DA., Heine T., Weber HB., Halik M., Hauke F., Hirsch A.:
Hierarchical Assembly and Sensing Activity of Patterned Graphene-Hamilton Receptor Nanostructures
In: Advanced Materials Interfaces (2022), Article No.: 2200425
ISSN: 2196-7350
DOI: 10.1002/admi.202200425
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Bergmann L., Pobegen G., Schlogl D., Schulze H., Weber HB., Krieger M.:
Measurement of the PtH defect depth profiles in fully processed silicon high-voltage diodes by improved current transient spectroscopy
34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 (Vancouver, BC, May 22, 2022 - May 25, 2022)
In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2022
DOI: 10.1109/ISPSD49238.2022.9813648
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Boolakee T., Heide C., Garzón-Ramírez A., Weber HB., Franco I., Hommelhoff P.:
Light-field control of real and virtual charge carriers
In: Nature 605 (2022), p. 251–255
ISSN: 0028-0836
DOI: 10.1038/s41586-022-04565-9
URL: https://www.nature.com/articles/s41586-022-04565-9
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Chen X., Assebban M., Kohring M., Bao L., Weber HB., Knirsch K., Hirsch A.:
Laser-Triggered Bottom-Up Transcription of Chemical Information: Toward Patterned Graphene/MoS2 Heterostructures
In: Journal of the American Chemical Society 144 (2022), p. 9645-9650
ISSN: 1520-5126
DOI: 10.1021/jacs.2c00642
URL: https://pubs.acs.org/doi/pdf/10.1021/jacs.2c00642
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Kodolitsch E., Sodan V., Krieger M., Tsavdaris N.:
Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
In: Materials Science Forum 1062 (2022), p. 49-53
ISSN: 0255-5476
DOI: 10.4028/p-f26rb5
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Kodolitsch E., Sodan V., Krieger M., Weber HB., Tsavdaris N.:
Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices
In: Materials Research Express 9 (2022), Article No.: 125901
ISSN: 2053-1591
DOI: 10.1088/2053-1591/acaa1f
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Korn S., Popp MA., Weber HB.:
A point-like thermal light source as a probe for sensing light-matter interaction
In: Scientific Reports 12 (2022), Article No.: 4881
ISSN: 2045-2322
DOI: 10.1038/s41598-022-07668-5
URL: https://www.nature.com/articles/s41598-022-07668-5
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Krieger M., Weber HB., van Eldik C.:
Früh zur Datenkompetenz
In: Physik Journal 21 (2022), p. 42
ISSN: 1617-9439
Open Access: https://www.pro-physik.de/restricted-files/158142
URL: https://www.pro-physik.de/restricted-files/158142
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Schlecht MT., Knorr M., Schmid C., Malzer S., Huber R., Weber HB.:
Light-field–driven electronics in the mid-infrared regime: Schottky rectification
In: Science Advances 8 (2022), Article No.: eabj5014
ISSN: 2375-2548
DOI: 10.1126/sciadv.abj5014
URL: https://www.science.org/doi/10.1126/sciadv.abj5014
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Schlecht MT., Knorr M., Schmid C., Malzer S., Huber R., Weber HB.:
Light-Field Driven Electronics in the Mid-Infrared Regime: Schottky Rectification
In: Science Advances (2022)
ISSN: 2375-2548
DOI: 10.1126/sciadv.abj5014
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Wei T., Liu X., Kohring M., Al-Fogra S., Moritz M., Hemmeter D., Paap U., Papp C., Steinrück HP., Bachmann J., Weber HB., Hauke F., Hirsch A.:
Molecular Stacking on Graphene
In: Angewandte Chemie International Edition (2022), Article No.: e202201169
ISSN: 1433-7851
DOI: 10.1002/anie.202201169
URL: https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.202201169
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Boolakee T., Heide C., Weber HB., Hommelhoff P.:
Light field-driven electron dynamics in 2D-materials
2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021 (Munich, DEU, June 21, 2021 - June 25, 2021)
In: 2021 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2021 2021
DOI: 10.1109/CLEO/Europe-EQEC52157.2021.9542335
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Chen X., Kohring M., Assebban M., Tywoniuk B., Bartlam C., Moses Badlyan N., Maultzsch J., Duesberg GS., Weber HB., Knirsch K., Hirsch A.:
Covalent Patterning of 2D MoS2
In: Chemistry - A European Journal (2021)
ISSN: 0947-6539
DOI: 10.1002/chem.202102021
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Heide C., Eckstein T., Boolakee T., Gerner C., Weber HB., Franco I., Hommelhoff P.:
Electronic Coherence and Coherent Dephasing in the Optical Control of Electrons in Graphene
In: Nano Letters 21 (2021), p. 9403–9409
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.1c02538
URL: https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.1c02538
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Kobayashi T., Rühl M., Lehmeyer J., Zimmermann L., Krieger M., Weber HB.:
Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing
In: Journal of Physics D-Applied Physics 55 (2021), Article No.: 105303
ISSN: 0022-3727
DOI: 10.1088/1361-6463/ac3a49
URL: http://iopscience.iop.org/article/10.1088/1361-6463/ac3a49
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Krieger M., Weber HB.:
Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface
In: Peter Wellmann, Noboru Ohtani, Roland Rupp (ed.): Wide Bandgap Semiconductors for Power Electronics, Weinheim: Wiley VCH, 2021, p. 249 - 270
ISBN: 978-3-527-34671-4
DOI: 10.1002/9783527824724.ch10
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Lehmeyer J., Fuchs A., Krieger M., Weber HB.:
NOMAD CAMELS - Configurable Application for Measurements, Experiments and Laboratory Systems
(2021), Article No.: /FAU-LAP/NOMAD-CAMELS
URL: https://github.com/FAU-LAP/NOMAD-CAMELS
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(anderer)
Nagy R., Dasari DBR., Babin C., Liu D., Vorobyov V., Niethammer M., Widmann M., Linkewitz T., Gediz I., Stoehr R., Weber HB., Ohshima T., Ghezellou M., Son NT., Ul-Hassan J., Kaiser F., Wrachtrup J.:
Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
In: Applied Physics Letters 118 (2021), p. 144003
ISSN: 0003-6951
DOI: 10.1063/5.0046563
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Popp MA., Erpenbeck A., Weber HB.:
Thermoelectricity of near-resonant tunnel junctions and their relation to Carnot efficiency
In: Scientific Reports 11 (2021), Article No.: 2031
ISSN: 2045-2322
DOI: 10.1038/s41598-021-81466-3
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Popp MA., Kohring M., Fuchs A., Korn S., Moses Badlyan N., Maultzsch J., Weber HB.:
The Squeezable Nanojunction as a tuneable light-matter interface for studying photoluminescence of 2D materials
In: 2D Materials 8 (2021), Article No.: 045034
ISSN: 2053-1583
DOI: 10.1088/2053-1583/ac2877
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Rühl M., Lehmeyer J., Nagy R., Weißer M., Bockstedte M., Krieger M., Weber HB.:
Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain
In: New Journal of Physics 23 (2021), Article No.: 073002
ISSN: 1367-2630
DOI: 10.1088/1367-2630/abfb3e
URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e
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Wei T., Kohring M., Weber HB., Hauke F., Hirsch A.:
Molecular embroidering of graphene
In: Nature Communications 12 (2021), Article No.: 552
ISSN: 2041-1723
DOI: 10.1038/s41467-020-20651-w
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Bao L., Kohring M., Weber HB., Hauke F., Hirsch A.:
Covalently Doped Graphene Superlattices: Spatially Resolved Supratopic- and Janus-Binding
In: Journal of the American Chemical Society 142 (2020), p. 16016-16022
ISSN: 1520-5126
DOI: 10.1021/jacs.0c07173
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Boolakee T., Heide C., Wagner F., Ott C., Schlecht MT., Ristein J., Weber HB., Hommelhoff P.:
Length-dependence of light-induced currents in graphene
In: Journal of Physics B-Atomic Molecular and Optical Physics (2020)
ISSN: 0953-4075
DOI: 10.1088/1361-6455/ab9075
URL: https://iopscience.iop.org/article/10.1088/1361-6455/ab9075
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Heide C., Hauck M., Higuchi T., Ristein J., Ley L., Weber HB., Hommelhoff P.:
Attosecond-fast internal photoemission
In: Nature Photonics 14 (2020), p. 219–222
ISSN: 1749-4885
DOI: 10.1038/s41566-019-0580-6
URL: https://arxiv.org/abs/2001.02989
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Lloret V., Nuin E., Kohring M., Wild S., Löffler M., Neiß C., Krieger M., Hauke F., Görling A., Weber HB., Abellán G., Hirsch A.:
Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors
In: Advanced Materials Interfaces (2020)
ISSN: 2196-7350
DOI: 10.1002/admi.202001290
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Ott C., Götzinger S., Weber HB.:
Thermal origin of light emission in nonresonant and resonant nanojunctions
In: Physical Review Research 2 (2020), Article No.: 042019 (R)
ISSN: 2643-1564
DOI: 10.1103/PhysRevResearch.2.042019
URL: https://link.aps.org/doi/10.1103/PhysRevResearch.2.042019
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Rühl M., Bergmann L., Krieger M., Weber HB.:
Stark Tuning of the Silicon Vacancy in Silicon Carbide
In: Nano Letters 20 (2020), p. 658-663
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.9b04419
URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.9b04419
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Wei T., Kohring M., Chen M., Yang S., Weber HB., Hauke F., Hirsch A.:
Highly Efficient and Reversible Covalent Patterning of Graphene: 2D-Management of Chemical Information
In: Angewandte Chemie International Edition (2020)
ISSN: 1433-7851
DOI: 10.1002/anie.201914088
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Berens J., Rasinger F., Aichinger T., Heuken M., Krieger M., Pobegen G.:
Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET
In: IEEE Transactions on Electron Devices 66 (2019), p. 1213-1217
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2891820
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Hauck M., Krieger M.:
Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs
In: Elektronikpraxis - Profiline Sonderheft Leistungselektronik und Stromversorgungen I (2019), p. 16-18
ISSN: 0341-5589
Open Access: http://www.elektronikpraxis.vogel.de/praeziser-einblick-ins-innerste-von-siliziumkarbid-mosfets-a-804294/
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Hauck M., Lehmeyer J., Pobegen G., Weber HB., Krieger M.:
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
In: Communications Physics 2 (2019), p. 5
ISSN: 2399-3650
DOI: 10.1038/s42005-018-0102-8
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Heide C., Boolakee T., Higuchi T., Weber HB., Hommelhoff P.:
Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime
In: New Journal of Physics (2019), Article No.: 045003
ISSN: 1367-2630
DOI: 10.1088/1367-2630/ab13ce
URL: https://arxiv.org/abs/1903.07558
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Heide C., Higuchi T., Ullmann K., Weber HB., Hommelhoff P.:
Lightwave-controlled electron dynamics in graphene
XXI International Conference on Ultrafast Phenomena 2018 (UP 2018)
In: EPJ Web Conf. (ed.): 205 2019
DOI: 10.1051/epjconf/201920505002
URL: https://www.epj-conferences.org/articles/epjconf/abs/2019/10/epjconf_up2019_05002/epjconf_up2019_05002.html
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Heidorn C., Esteve R., Höchbauer T., Krieger M., Weber HB., Rupp R.:
Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, September 2, 2018 - September 6, 2018)
In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): Materials Science Forum 2019
DOI: 10.4028/www.scientific.net/MSF.963.114
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Kißlinger F., Rienmüller D., Ott C., Kampert E., Weber HB.:
Fractional Quantum Conductance Plateaus in Mosaic-Like Conductors and Their Similarities to the Fractional Quantum Hall Effect
In: Annalen Der Physik 531 (2019), Article No.: 1800188
ISSN: 0003-3804
DOI: 10.1002/andp.201800188
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Popp MA., Weber HB.:
An ultra-stable setup for measuring electrical and thermoelectrical properties of nanojunctions
In: Applied Physics Letters 115 (2019), Article No.: 083108
ISSN: 0003-6951
DOI: 10.1063/1.5116673
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Rasinger F., Hauck M., Rescher G., Aichinger T., Weber HB., Krieger M., Pobegen G.:
On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs
In: Applied Physics Letters 115 (2019), p. 152102
ISSN: 0003-6951
DOI: 10.1063/1.5117829
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Schlecht MT., Malzer S., Preu S., Weber HB.:
An efficient Terahertz rectifier on the graphene/SiC materials platform
In: Scientific Reports 9 (2019), Article No.: 11205
ISSN: 2045-2322
DOI: 10.1038/s41598-019-47606-6
URL: https://www.nature.com/articles/s41598-019-47606-6
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Weber HB., Popp MA.:
Wie Molekülschwingungen Wärme leiten
In: Physik Journal 18 (2019), p. 20-21
ISSN: 1617-9439
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Weiße J., Hauck M., Krieger M., Bauer A., Erlbacher T.:
Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
In: AIP Advances 9 (2019), p. 055308
ISSN: 2158-3226
DOI: 10.1063/1.5096440
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Weiße J., Hauck M., Krieger M., Bauer AJ., Erlbacher T.:
Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440)
In: AIP Advances 9 (2019), Article No.: 079901
ISSN: 2158-3226
DOI: 10.1063/1.5118666
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Weiße J., Hauck M., Sledziewski T., Krieger M., Bauer A., Mitlehner H., Frey L., Erlbacher T.:
On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements
12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, September 2, 2018 - September 6, 2018)
In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): Materials Science Forum 2019
DOI: 10.4028/www.scientific.net/MSF.963.433
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Heide C., Higuchi T., Weber HB., Hommelhoff P.:
Coherent Electron Trajectory Control in Graphene
In: Physical Review Letters 121 (2018), Article No.: 207401
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.121.207401
URL: https://arxiv.org/abs/1811.07047
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Higuchi T., Heide C., Ullmann K., Weber HB., Hommelhoff P.:
Landau-Zener-Stückelberg interferometer on attosecond timescales in graphene
Ultrafast Phenomena and Nanophotonics XXII 2018 (San Francisco, CA, USA, January 29, 2018 - January 31, 2018)
In: Abdulhakem Y. Elezzabi, Markus Betz (ed.): Proceedings of SPIE - The International Society for Optical Engineering 2018
DOI: 10.1117/12.2289540
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Niesner D., Hauck M., Shrestha S., Levchuk I., Matt G., Osvet A., Batentschuk M., Brabec C., Weber HB., Fauster T.:
Structural fluctuations cause spin-split states in tetragonal (CH₃NH₃)PbI₃ as evidenced by the circular photogalvanic effect
In: Proceedings of the National Academy of Sciences of the United States of America 115 (2018), p. 9509-9514
ISSN: 0027-8424
DOI: 10.1073/pnas.1805422115
URL: https://www.pnas.org/doi/epdf/10.1073/pnas.1805422115
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Preu S., Müller-Landau C., Malzer S., Weber HB., Döhler G., Winnerl S., Burke P., Gossard A.:
Terahertz generation with ballistic photodiodes under pulsed operation
In: Semiconductor Science and Technology 33 (2018), Article No.: 114015
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aae5e4
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Rasinger F., Pobegen G., Aichinger T., Weber HB., Krieger M.:
Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs
In: Materials Science Forum 924 (2018), p. 277-280
ISSN: 0255-5476
DOI: 10.4028/MSF.924.277
URL: https://www.scientific.net/MSF.924.277
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Rasinger F., Pobegen G., Aichinger T., Weber HB., Krieger M.:
Determination of performance-relevant trapped charge in 4H silicon carbide MOSFETs
International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 (Columbia, WA, USA, September 17, 2017 - September 22, 2017)
In: Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars Lelis (ed.): Materials Science Forum 2018
DOI: 10.4028/www.scientific.net/MSF.924.277
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Rühl M., Ott C., Götzinger S., Krieger M., Weber HB.:
Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing
In: Applied Physics Letters 113 (2018), p. 122102
ISSN: 0003-6951
DOI: 10.1063/1.5045859
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Schultheiß V., Wimmer M., Malzer S., Peschel U.:
Extreme Events through Prevailing Backscattering and Their Suppression by a Focusing Nonlinearity
In: Physical Review X 8 (2018), Article No.: 011017
ISSN: 2160-3308
DOI: 10.1103/PhysRevX.8.011017
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Weiße J., Hauck M., Sledziewski T., Tschiesche M., Krieger M., Bauer A., Mitlehner H., Frey L., Erlbacher T.:
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
In: Materials Science Forum 924 (2018), p. 184-187
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.924.184
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Higuchi T., Heide C., Ullmann K., Weber HB., Hommelhoff P.:
Electron dynamics in graphene reaching the light-field-driven regime
The European Conference on Lasers and Electro-Optics, CLEO_Europe 2017 (Munich, DEU, June 25, 2017 - June 29, 2017)
In: Optics InfoBase Conference Papers 2017
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Higuchi T., Heide C., Ullmann K., Weber HB., Hommelhoff P.:
Light-field-driven currents in graphene
In: Nature 550 (2017), p. 224–228
ISSN: 0028-0836
DOI: 10.1038/nature23900
URL: https://arxiv.org/abs/1607.04198
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Kißlinger F., Ott C., Weber HB.:
Origin of nonsaturating linear magnetoresistivity
In: Physical Review B 95 (2017), p. 024204
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.95.024204
URL: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.95.024204
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Kißlinger F., Popp MA., Jobst J., Shallcross S., Weber HB.:
Charge-carrier transport in large-area epitaxial graphene
In: Annalen Der Physik 2017 (2017), Article No.: 1700048
ISSN: 0003-3804
DOI: 10.1002/andp.201700048
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Leitherer S., Brana Coto P., Ullmann K., Weber HB., Thoss M.:
Charge Transport in C60-based Single-Molecule Junctions with Graphene Electrodes
In: Nanoscale 9 (2017), p. 7217-7226
ISSN: 2040-3364
DOI: 10.1039/C7NR00170C
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Shallcross S., Sharma S., Weber HB.:
Anomalous Dirac point transport due to extended defects in bilayer graphene
In: Nature Communications 8 (2017), p. 342
ISSN: 2041-1723
DOI: 10.1038/s41467-017-00397-8
URL: https://www.nature.com/articles/s41467-017-00397-8
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Weber J., Weber HB., Krieger M.:
On deep level transient spectroscopy of extended defects in n-type 4H-SiC
11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 (Halkidiki, GRC, September 25, 2016 - September 29, 2016)
In: Konstantinos Zekentes, Konstantinos Zekentes, Konstantin V. Vasilevskiy, Nikolaos Frangis (ed.): Materials Science Forum 2017
DOI: 10.4028/www.scientific.net/MSF.897.201
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Caridad JM., Connaughton S., Ott C., Weber HB., Krstic V.:
An electrical analogy to Mie scattering
In: Nature Communications 7 (2016), Article No.: 12894
ISSN: 2041-1723
DOI: 10.1038/ncomms12894
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Hauck M., Weiße J., Lehmeyer J., Pobegen G., Weber HB., Krieger M.:
Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
In: Materials Science Forum, 2016
DOI: 10.4028/www.scientific.net/MSF.897.111
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Higuchi T., Heide C., Ullmann K., Weber HB., Hommelhoff P.:
Light-field driven currents in graphene
In: arXiv 12 (2016)
ISSN: 2331-8442
URL: http://arxiv.org/abs/1607.04198
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Krieger M., Rühl M., Sledziewski T., Ellrott G., Palm T., Weber HB., Bockstedte MG.:
Doping of 4H-SiC with group IV elements
In: Materials Science Forum 858 (2016), p. 301
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.301
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Pobegen G., Weiße J., Hauck M., Weber HB., Krieger M.:
On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs
In: Materials Science Forum 858 (2016)
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.473
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Santamaría-Botello G., Garcia Munoz LE., Sedlmeir F., Preu S., Preu S., Segovia-Vargas D., Atia Abdalmalak K., Llorente Romano S., García Lampérez A., Malzer S., Döhler G., Schwefel H., Weber HB.:
Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism
In: Optics Express 24 (2016), p. 26503-26514
ISSN: 1094-4087
DOI: 10.1364/OE.24.026503
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Sledziewski T., Vivona M., Alassaad K., Kwasnicki P., Arvinte R., Beljakowa S., Weber HB., Giannazzo F., Peyre H., Souliere V., Chassagne T., Zielinski M., Juillaguet S., Ferro G., Roccaforte F., Krieger M.:
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
In: Journal of Applied Physics 120 (2016)
ISSN: 0021-8979
DOI: 10.1063/1.4967301
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Sledziewski T., Weber HB., Krieger M.:
Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces
In: Materials Science Forum 858 (2016), p. 697-700
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.858.697
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Bhattacharya R., Mondal R., Khatua P., Rudra A., Kapon E., Malzer S., Döhler G., Pal B., Bansal B.:
Measurements of the Electric Field of Zero-Point Optical Phonons in GaAs Quantum Wells Support the Urbach Rule for Zero-Temperature Lifetime Broadening
In: Physical Review Letters 114 (2015)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.114.047402
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Giannazzo F., Hertel S., Albert A., Fisichella G., La Magna A., Roccaforte F., Krieger M., Weber HB.:
Electrical properties of the hydrogen intercalated epitaxial graphene/SiC interface investigated by nanoscale current mapping
In: Materials Science Forum 821-823 (2015), p. 929-932
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.929
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Hertel S., Finkler A., Krieger M., Weber HB.:
Graphene Ohmic Contacts to n-type Silicon Carbide (0001)
In: Materials Science Forum 821-823 (2015), p. 933-936
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.933
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Kautz J., Jobst J., Sorger C., Tromp RM., Weber HB., Van Der Molen SJ.:
Low-Energy Electron Potentiometry: Contactless Imaging of Charge Transport on the Nanoscale
In: Scientific Reports 5 (2015)
ISSN: 2045-2322
DOI: 10.1038/srep13604
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Kißlinger F., Ott C., Heide C., Kampert E., Butz B., Spiecker E., Shallcross S., Weber HB.:
Linear magnetoresistance in mosaic-like bilayer graphene
In: Nature Physics 11 (2015), p. 650-+
ISSN: 1745-2473
DOI: 10.1038/NPHYS3368
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Kolesnik-Gray M., Sorger C., Biswas S., Holmes JD., Weber HB., Krstic V.:
In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices
In: Applied Physics Letters 106 (2015), Article No.: 233109
ISSN: 0003-6951
DOI: 10.1063/1.4922527
URL: http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527
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Rivera-Lavado A., Preu S., García Muñoz LE., Generalov A., Montero-de-Paz J., Doehler G., Lioubtchenko D., Mendez-Aller M., Sedlmeir F., Schneidereit M., Schwefel HGL., Malzer S., Segovia-Vargas D., Raeisaenen AV.:
Dielectric Rod Waveguide Antenna as THz Emitter for Photomixing Devices
In: IEEE Transactions on Antennas and Propagation 63 (2015), p. 882-890
ISSN: 0018-926X
DOI: 10.1109/TAP.2014.2387419
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Sledziewski T., Ellrott G., Rösch W., Weber HB., Krieger M.:
Reduction of implantation-induced point defects by germanium ions in n-type 4H-SiC
In: Materials Science Forum 821-823 (2015), p. 347-350
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.821-823.347
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Sorger C., Hertel S., Jobst J., Steiner C., Meil K., Ullmann K., Albert A., Wang Y., Krieger M., Ristein J., Maier S., Weber HB.:
Gateless patterning of epitaxial graphene by local intercalation
In: Nanotechnology 26 (2015), p. 025302
ISSN: 1361-6528
DOI: 10.1088/0957-4484/26/2/025302
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Sorger C., Preu S., Schmidt J., Winnerl S., Bludov Y., Peres N., Vasilevskiy M., Weber HB.:
Terahertz response of patterned epitaxial graphene
In: New Journal of Physics 17 (2015)
ISSN: 1367-2630
DOI: 10.1088/1367-2630/17/5/053045
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Ullmann K., Brana Coto P., Leitherer S., Molina-Ontoria A., Martin N., Thoss M., Weber HB.:
Single-Molecule Junctions with Epitaxial Graphene Nanoelectrodes
In: Nano Letters 15 (2015), p. 3512-3518
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.5b00877
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Bayaya E., Waldmann D., Krieger M., Weber HB.:
Epitaxial graphene as an electrode material: a transistor testbed for organic and all-carbon semiconductors
In: RSC Advances 4 (2014), p. 34474
ISSN: 2046-2069
DOI: 10.1039/c4ra06131d
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Beljakowa S., Hauck M., Bockstedte MG., Fromm F., Hundhausen M., Nagasawa H., Weber HB., Pensl G., Krieger M.:
Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
In: Materials Science Forum 778-780 (2014), p. 265-268
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.265
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Butz B., Dolle C., Niekiel F., Weber K., Waldmann D., Weber HB., Meyer B., Spiecker E., Spiecker E.:
Dislocations in bilayer graphene
In: Nature 505 (2014), p. 533-537
ISSN: 0028-0836
DOI: 10.1038/nature12780
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Giannazzo F., Hertel S., Albert A., La Magna A., Roccaforte F., Krieger M., Weber HB.:
Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts
In: Materials Science Forum 778-780 (2014), p. 1142-1145
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.1142
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Hertel S., Krieger M., Weber HB.:
Monolithic circuits with epitaxial graphene/silicon carbide transistors
In: Physica Status Solidi 8 (2014), p. 688-691
ISSN: 0031-8957
DOI: 10.1002/pssr.201409171
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Schinabeck C., Härtle R., Weber HB., Thoss M.:
Current noise in single-molecule junctions induced by electronic-vibrational coupling
In: Physical Review B 90 (2014)
ISSN: 0163-1829
DOI: 10.1103/PhysRevB.90.075409
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Sledziewski T., Beljakowa S., Alassaad K., Kwasnicki P., Arvinte R., Juillaguet S., Zielinski M., Souliere V., Ferro G., Weber HB., Krieger M.:
Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition
In: Materials Science Forum 778-780 (2014), p. 261-264
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.778-780.261
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Wehrfritz P., Fromm F., Malzer S., Seyller T.:
Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate
In: Journal of Physics D-Applied Physics 47 (2014), p. 305103 (5pp)
ISSN: 0022-3727
DOI: 10.1088/0022-3727/47/30/305103
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Ballmann SD., Hieringer W., Härtle R., Brana Coto P., Bryce M., Görling A., Thoss M., Weber HB.:
The role of vibrations in single-molecule charge transport: A case study of oligoynes with pyridine anchor groups
In: physica status solidi (b) 250 (2013), p. 2452-2457
ISSN: 0370-1972
DOI: 10.1002/pssb.201350025
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Bauerschmidt S., Döhler G., Lu H., Gossard A., Malzer S., Preu S.:
Arrayed free space continuous-wave terahertz photomixers
In: Optics Letters 38 (2013), p. 3673-3676
ISSN: 0146-9592
DOI: 10.1364/OL.38.003673
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Jobst J., Kißlinger F., Weber HB.:
Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies
In: Physical Review B 88 (2013), p. 155412
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.88.155412
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Malzer S., Criado R., de Dios C., Preu S., Prior E., Acedo P., Döhler G., Lu H., Gossard A.:
Continuous-Wave Sub-THz Photonic Generation With Ultra-Narrow Linewidth, Ultra-High Resolution, Full Frequency Range Coverage and High Long-Term Frequency Stability
In: IEEE Transactions on Terahertz Science and Technology (2013)
ISSN: 2156-342X
DOI: 10.1109/TTHZ.2013.2260374
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Malzer S., Döhler G., Garcia-Munoz E., Preu S., Bauerschmidt S., Montero-De-Paz J., Ugarte-Munoz E., Rivera-Lavado A., Segovia-Vargas D., Gonzalez-Posadas V.:
From arrays of THz antennas to large-area emitters
In: IEEE Transactions on Terahertz Science and Technology 3 (2013), p. 532-544
ISSN: 2156-342X
DOI: 10.1109/TTHZ.2013.2266541
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Preu S., Mittendorff M., Winnerl S., Lu H., Gossard A., Weber HB.:
Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals
In: Optics Express 21 (2013), p. 17941-17950
ISSN: 1094-4087
DOI: 10.1364/OE.21.017941
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Preu S., Regensburger S., Kim S., Mittendorff M., Winnerl S., Malzer S., Lu H., Burke P., Gossard A., Weber HB., Sherwin MS.:
Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers
6th International Conference on Millimetre Wave and Terahertz Sensors and Technology (Dresden)
DOI: 10.1117/12.2029478
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Rivera-Lavado A., Garcia-Munoz E., Döhler G., Malzer S., Preu S., Bauerschmidt S., Montero-De-Paz J., Ugarte-Munoz E., Andres-Garcia B., Izquierdo-Bermudez V., Segovia-Vargas D.:
Arrays and new antenna topologies for increasing THz power generation using photomixers
In: Journal of Infrared, Millimeter, and Terahertz Waves 34 (2013), p. 97-108
ISSN: 1866-6892
DOI: 10.1007/s10762-013-9954-x
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Shivaraman S., Jobst J., Waldmann D., Weber HB., Spencer M.:
Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer
In: Physical Review B 87 (2013)
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.87.195425
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Turkoglu F., Ozyuzer O., Koseoglu H., Demirhan Y., Preu S., Malzer S., Simsek Y., Wang H., Müller P.:
Emission of the THz waves from large area mesas of superconducting Bi 2Sr2CaCu2O8+δ by the injection of spin polarized current
In: Physica C-Superconductivity and Its Applications 491 (2013), p. 7-10
ISSN: 0921-4534
DOI: 10.1016/j.physc.2013.01.014
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Wagner S., Kißlinger F., Ballmann S., Schramm F., Chandrasekar R., Bodenstein T., Fuhr O., Secker D., Fink K., Ruben M., Weber HB.:
Switching of a coupled spin pair in a single-molecule junction
In: Nature Nanotechnology 8 (2013), p. 575-579
ISSN: 1748-3387
DOI: 10.1038/nnano.2013.133
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Waldmann D., Butz B., Bauer S., Englert J., Jobst J., Ullmann K., Fromm F., Ammon MM., Enzelberger-Heim M., Hirsch A., Maier S., Schmuki P., Seyller T., Spiecker E., Weber HB., Spiecker E.:
Robust graphene membranes in a silicon carbide frame
In: ACS nano 7 (2013), p. 4441-4448
ISSN: 1936-0851
DOI: 10.1021/nn401037c
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Wehrfritz P., Fromm F., Malzer S., Seyller T.:
Silicon nitride as top gate dielectric for epitaxial graphene
In: Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (ed.): Silicon Carbide and Related Materials 2012, Trans Tech Publications, 2013, p. 149-152 (Materials Science Forum)
DOI: 10.4028/www.scientific.net/MSF.740-742.149
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Andres-Garcia B., Garcia-Munoz E., Segovia-Vargas D., Bauerschmidt S., Döhler G., Preu S., Malzer S., Lu H., Gossard A.:
High power terahertz photomixer arrays
6th European Conference on Antennas and Propagation, EuCAP 2012 (Prague)
DOI: 10.1109/EuCAP.2012.6206195
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Ballmann S., Härtle R., Brana Coto P., Elbing M., Mayor M., Bryce M., Thoss M., Weber HB.:
Experimental Evidence for Quantum Interference and Vibrationally Induced Decoherence in Single-Molecule Junctions
In: Physical Review Letters 109 (2012), p. 056801
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.109.056801
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Ballmann SD., Weber HB.:
An electrostatic gate for mechanically controlled single-molecule junctions
In: New Journal of Physics 14 (2012)
ISSN: 1367-2630
DOI: 10.1088/1367-2630/14/12/123028
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Criado R., de Dios C., Döhler G., Preu S., Malzer S., Bauerschmidt S., Lu H., Gossard A., Acedo P.:
Ultra-narrow linewidth CW sub-THz generation using GS based OFCG and n-i-pn-i-p superlattice photomixers
In: Electronics Letters 48 (2012), p. 1425-1426
ISSN: 0013-5194
DOI: 10.1049/el.2012.3158
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Hertel S., Waldmann D., Jobst J., Albert A., Albrecht M., Krieger M., Reshanov S., Schöner A., Weber HB.:
Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
In: Nature Communications 3 (2012), p. 957
ISSN: 2041-1723
DOI: 10.1038/ncomms1955
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Jobst J., Waldmann D., Gornyi I., Mirlin A., Weber HB.:
Electron-Electron Interaction in the Magnetoresistance of Graphene
In: Physical Review Letters 108 (2012)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.108.106601
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Jobst J., Weber HB.:
Origin of logarithmic resistance correction in graphene
In: Nature Physics 8 (2012), p. 352-352
ISSN: 1745-2473
DOI: 10.1038/nphys2297
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Krach F., Hertel S., Waldmann D., Jobst J., Krieger M., Reshanov S., Schoner A., Weber HB.:
A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel
In: Applied Physics Letters 100 (2012), p. 122102
ISSN: 0003-6951
DOI: 10.1063/1.3695157
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Preu S., Mittendorff M., Lu H., Weber HB., Winnerl S., Gossard A.:
1550 nm ErAs:In(Al)GaAs large area photoconductive emitters
In: Applied Physics Letters 101 (2012)
ISSN: 0003-6951
DOI: 10.1063/1.4750244
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Turkoglu F., Koseoglu H., Demirhan Y., Ozyuzer O., Preu S., Malzer S., Simsek Y., Müller P., Yamamoto T., Kadowaki K.:
Interferometer measurements of terahertz waves from Bi 2Sr 2CaCu 2O 8+d mesas
In: Superconductor Science & Technology 25 (2012), Article No.: 125004
ISSN: 0953-2048
DOI: 10.1088/0953-2048/25/12/125004
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Waldmann D., Jobst J., Fromm F., Speck F., Seyller T., Krieger M., Weber HB.:
Implanted bottom gate for epitaxial graphene on silicon carbide
In: Journal of Physics D-Applied Physics 45 (2012), p. 154006
ISSN: 0022-3727
DOI: 10.1088/0022-3727/45/15/154006
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Waldmann D., Jobst J., Speck F., Seyller T., Krieger M., Weber HB.:
Gated Epitaxial Graphene Devices
In: Materials Science Forum 717-720 (2012), p. 675-678
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.675
URL: http://www.scientific.net/MSF.717-720.675
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Zippelius B., Glas A., Weber HB., Pensl G., Kimoto T., Krieger M.:
Z(1/2)- and EH6-Center in 4H-SiC: Not Identical Defects?
In: Materials Science Forum 717-720 (2012), p. 251-254
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.717-720.251
URL: http://www.scientific.net/MSF.717-720.251
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de Dios C., Criado R., Döhler G., Preu S., Malzer S., Bauerschmidt S., Garcia-Munoz E., Segovia-Vargas D., Acedo P.:
Sub-THz and THz Photonic generation with continuous tunability using gain switching based optical frequency comb generators and n-i-p-n-i-p superlattice photomixers
2012 IEEE International Topical Meeting on Microwave Photonics, MWP 2012 (Noordwijk)
DOI: 10.1109/MWP.2012.6474118
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Hertel S., Kißlinger F., Jobst J., Waldmann D., Krieger M., Weber HB.:
Current annealing and electrical breakdown of epitaxial graphene
In: Applied Physics Letters 98 (2011), p. 212109
ISSN: 0003-6951
DOI: 10.1063/1.3592841
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Jobst J., Waldmann D., Speck F., Hirner R., Maude D., Seyller T., Weber HB.:
Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)
In: Solid State Communications 151 (2011), p. 1061-1064
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2011.05.015
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Malzer S., Andres-Garcia B., Garcia-Munoz E., Segovia-Vargas D., Bauerschmidt S., Preu S., Döhler G., Wang L.:
Gain enhancement by dielectric horns in the Terahertz band
In: IEEE Transactions on Antennas and Propagation 59 (2011), p. 3164-3170
ISSN: 0018-926X
DOI: 10.1109/TAP.2011.2161563
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Malzer S., Smyrnov O., Biancalana F.:
Modulational instability and solitons in excitonic semiconductor waveguides
In: Physical Review B 83 (2011), Article No.: 205207
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.83.205207
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Malzer S., Wang L., Gossard A., Döhler G., Preu S.:
Tunable, Continuos-Wave Photomixer Sources and Applications
In: Journal of Applied Physics 109 (2011), p. 061301
ISSN: 0021-8979
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Preu S., Bauerschmidt S., Malzer S., Döhler G., Lu H., Gossard A., Wang L.:
Arrayed telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopy applications
In: Mauro F. Pereira, Oleksiy Shulika (ed.): Terahertz and Midinfrared Radiation, Springer Verlag, 2011, p. 139-146 (NATO Science for Peace and Security Series B: Physics and Biophysics)
ISBN: 978-94-007-0768-9
DOI: 10.1007/978-94-007-0769-6-20
URL: http://link.springer.com/chapter/10.1007/978-94-007-0769-6_20
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Secker D., Wagner S., Ballmann SD., Härtle R., Thoss M., Weber HB.:
Resonant Vibrations, Peak Broadening, and Noise in Single Molecule Contacts: The Nature of the First Conductance Peak
In: Physical Review Letters 106 (2011), p. 136807
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.106.136807
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Sedlmeir F., Schwefel H., Strekalov DV., Bauerschmidt S., Preu S., Malzer S., Döhler G., Leuchs G.:
Efficient optical up-conversion by coherent sum-frequency generation for highly sensitive terahertz detection
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 (Munich)
DOI: 10.1109/CLEOE.2011.5942526
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Speck F., Jobst J., Fromm F., Ostler M., Waldmann D., Hundhausen M., Weber HB., Seyller T.:
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
In: Applied Physics Letters 9 (2011), p. 12206
ISSN: 0003-6951
DOI: 10.1063/1.3643034
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Waldmann D., Jobst J., Speck F., Seyller T., Krieger M., Weber HB.:
Bottom-gated epitaxial graphene
In: Nature Materials 10 (2011), p. 357-360
ISSN: 1476-1122
DOI: 10.1038/nmat2988
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Arora A., Gosh S., Arora BM., Malzer S., Döhler G.:
Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)
In: Applied Physics Letters 97 (2010), Article No.: 081902
ISSN: 0003-6951
DOI: 10.1063/1.3479501
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Arora A., Karmakar B., Sharma S., Schardt M., Malzer S., Bansal B., Döhler G., Arora BM.:
Fiber optic based system for polarization sensitive spectroscopy of semiconductor quantum structures
In: Review of Scientific Instruments 81 (2010), Article No.: 083901
ISSN: 0034-6748
DOI: 10.1063/1.3462977
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Ballmann S., Hieringer W., Secker D., Zheng Q., Gladysz JA., Görling A., Weber HB.:
Molecular wires in single-molecule junctions: Charge transport and vibrational excitations
In: ChemPhysChem 11 (2010), p. 2256-2260
ISSN: 1439-4235
DOI: 10.1002/cphc.200900974
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Bauer A., Friedrichs P., Krieger M., Pensl G., Rupp R., Seyller T. (ed.):
Silicon Carbide and Related Materials 2009 - Parts 1 and 2
Stafa-Zuerich: 2010
(Materials Science Forum, Vol. 645-648)
ISBN: 0-87849-279-8
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Bauerschmidt S., Malzer S., Preu S., Döhler G., Lu H., Gossard A., Wang L.:
Continuos Wave Terahertz Emitter Arrays for Spectroscopy and Imaging Applications
In: Proceedings of SPIE 7671 (2010), p. 7671D
ISSN: 0277-786X
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Bauerschmidt S., Preu S., Malzer S., Döhler G., Wang L., Lu H., Gossard A.:
Continuous wave terahertz emitter arrays for spectroscopy and imaging applications
Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense (Orlando, FL)
DOI: 10.1117/12.850090
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Jobst J., Waldmann D., Speck F., Hirner R., Maude D., Seyller T., Weber HB.:
Quantum oscillations and quantum Hall effect in epitaxial graphene
In: Physical Review B 81 (2010)
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.81.195434
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Preu S., Malzer S., Döhler G., Lu H., Gossard A., Wang L.:
Efficient III-V tunneling diodes with ErAs recombination centers
In: Semiconductor Science and Technology 25 (2010), Article No.: 115004
ISSN: 0268-1242
DOI: 10.1088/0268-1242/25/11/115004
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Speck F., Ostler M., Röhrl J., Jobst J., Waldmann D., Hundhausen M., Ley L., Weber HB., Seyller T.:
Quasi-freestanding Graphene on SiC(0001)
In: Materials Science Forum 645-648 (2010), p. 629-632
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.645-648.629
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Emtsev K., Bostwick A., Horn K., Jobst J., Kellogg GL., Ley L., McChesney J., Ohta T., Reshanov S., Röhrl J., Rotenberg E., Schmid A., Waldmann D., Weber HB., Seyller T.:
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
In: Nature Materials 8 (2009), p. 203-207
ISSN: 1476-1122
DOI: 10.1038/NMAT2382
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Krieger M., Beljakowa S., Trapaidze L., Frank T., Weber HB., Pensl G., Hatta N., Abe M., Nagasawa H., Schöner A.:
Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors
In: physica status solidi (b) 245 (2008), p. 1390-1395
ISSN: 0370-1972
DOI: 10.1002/pssb.200844062
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Lauffer P., Emtsev K., Graupner R., Ley L., Seyller T., Reshanov S., Weber HB.:
Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy
In: Physical Review B 77 (2008), p. 155426
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.77.155426
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Lörtscher M., Elbing M., Tschudy M., von Hänisch C., Weber HB., Mayor M., Riel H.:
Charge Transport through Molecular Rods with Reduced pi-Conjugation
In: ChemPhysChem 9 (2008), p. 2252-2258
ISSN: 1439-4235
DOI: 10.1002/cphc.200800388
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Malzer S., Schwefel H., Preu S., Döhler G., Wang L., Hanson M., Zimmerman J., Gossard A.:
Coupled whispering gallery mode resonators in the Terahertz frequency range
In: Optics Express 16 (2008), p. 7336-7343
ISSN: 1094-4087
DOI: 10.1364/OE.16.007336
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Preu S., Malzer S., Döhler G., Zhao Q., Hanson M., Zimmerman J., Gossard A., Wang L.:
Interference between two coherently driven monochromatic terahertz sources
In: Applied Physics Letters 92 (2008), Article No.: 221107
ISSN: 0003-6951
DOI: 10.1063/1.2938874
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Ruben M., Landa A., Lörtscher E., Riel H., Mayor M., Görls H., Weber HB., Arnold A., Evers F.:
Charge Transport Through a Cardan-Joint Molecule
In: Small 4 (2008), p. 2229-2235
ISSN: 1613-6829
DOI: 10.1002/smll.200800390
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Karmakar B., Schardt M., Malzer S., Arora BM., Döhler G.:
Optical Landau state mapping with in-plane electric fields
In: Physica Status Solidi (C) Current Topics in Solid State Physics 4 (2007), p. 279-287
ISSN: 1862-6351
DOI: 10.1002/pssc.200673208
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Krieger M., Semmelroth K., Weber HB., Pensl G., Rambach M., Frey L.:
Impurity Conduction in Silicon Carbide
In: Materials Science Forum 556-557 (2007), p. 364
ISSN: 0255-5476
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Loth S., Wenderoth M., Ulbrich RG., Malzer S., Döhler G.:
Connection of anisotropic conductivity to tip-induced space-charge layers in scanning tunneling spectroscopy of p-doped GaAs
In: Physical Review B 76 (2007), Article No.: 235318
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.76.235318
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Lörtscher M., Weber HB., Riel H.:
Statistical approach to investigating transport through single molecules
In: Physical Review Letters 98 (2007)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.98.176807
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Malzer S., Zhao Q., Wang L.:
Self-organized tungsten nanospikes grown on subwavelength ripples induced by femtosecond laser pulses
In: Optics Express 15 (2007), p. 15741-15746
ISSN: 1094-4087
DOI: 10.1364/OE.15.015741
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Preu S., Renner F., Malzer S., Döhler G., Wang L., Hanson M., Gossard A., Wilkinson T., Brown ER.:
Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers
In: Applied Physics Letters 90 (2007), Article No.: 212115
ISSN: 0003-6951
DOI: 10.1063/1.2743400
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Ropers C., Wenderoth M., Lars W., Thilo R., Erdmann M., Ulbrich RG., Grochol M., Grosse F., Zimmermann R., Malzer S., Döhler G.:
Atomic scale structure and optical emission of Alx Ga1-x As GaAs quantum wells
In: Physical Review B 75 (2007), Article No.: 115317
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.75.115317
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Secker D., Weber HB.:
Charge transport across single-molecule junctions: charge reconfiguration and structural dynamics
In: physica status solidi (b) 244 (2007), p. 4176-4180
ISSN: 0370-1972
DOI: 10.1002/pssb.200776207
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Semmelroth K., Krieger M., Pensl G., Nagasawa H., Püsche R., Hundhausen M., Ley L., Nerding M., Strunk HP.:
Growth of cubic SiC single crystals by the physical vapor transport technique
In: Journal of Crystal Growth 308 (2007), p. 241-246
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.07.060
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Zhao Q., Ciobanu F., Malzer S., Wang L.:
Enhancement of optical absorption and photocurrent of 6H-SiC by laser surface nanostructuring
In: Applied Physics Letters 91 (2007), Article No.: 121107
ISSN: 0003-6951
DOI: 10.1063/1.2786863
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Zhao Q., Malzer S., Wang L.:
Formation of subwavelength periodic structures on tungsten induced by ultrashort laser pulses
In: Optics Letters 32 (2007), p. 1932-1934
ISSN: 0146-9592
DOI: 10.1364/OL.32.001932
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Kiesel P., Schmidt O., Mohta S., Johnson N., Malzer S.:
Compact, low-cost, and high-resolution interrogation unit for optical sensors
In: Applied Physics Letters 89 (2006), Article No.: 201113
ISSN: 0003-6951
DOI: 10.1063/1.2390650
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Loth S., Wenderoth M., Winking L., Ulbrich R.G., Malzer S., Dohler G.H.:
Probing semiconductor gap states with resonant tunneling
In: Physical Review Letters 96 (2006)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.96.066403
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Rurimo G.K., Schardt M., Quabis S., Malzer S., Dotzler Ch., Winkler A., Leuchs G., Dohler G.H., Driscoll D., Hanson M., Gossard A.C., Pereira S.F.:
Using a quantum well heterostructure to study the longitudinal and transverse electric field components of a strongly focused laser beam
In: Journal of Applied Physics 100 (2006), Article No.: 023112
ISSN: 0021-8979
DOI: 10.1063/1.2214207
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Schardt M., Winkler A., Rurimo G., Hanson M., Driscoll D., Quabis S., Malzer S., Leuchs G., Dohler G.H., Gossard A.C.:
TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidence
In: Physica E-Low-Dimensional Systems & Nanostructures 32 (2006), p. 241-244
ISSN: 1386-9477
DOI: 10.1016/j.physe.2005.12.168
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Beck M., Metzner C., Malzer S., Dohler G.H.:
Spin lifetimes and strain-controlled spin precession of drifting electrons in GaAs
In: EPL - Europhysics Letters 75 (2006), p. 597-603
ISSN: 0295-5075
DOI: 10.1209/epl/i2006-10151-4
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Ochs R., Secker D., Elbing M., Mayor M., Weber HB.:
Fast temporal fluctuations in single-molecule junctions
In: Faraday Discussions 131 (2006), p. 281-289
ISSN: 1359-6640
DOI: 10.1039/b506390f
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Püsche R., Hundhausen M., Ley L., Semmelroth K., Pensl G., Desperrier P., Wellmann P., Haller EE., Ager J., Starke U.:
Electronic Raman Studies of Shallow Donors in Silicon Carbide
In: Materials Science Forum 527-529 (2006), p. 579
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.527-529.579
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Schmid F., Pensl G., Bockstedte MG., Mattausch A., Pankratov O., Ohshima T., Itoh H., Weber HB., Reshanov S.:
Deactivation of nitrogen donors in silicon carbide
In: Physical Review B B 74 (2006), p. 245212
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.74.245212
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Schmidt R., Scholz U., Vitzthum M., Fix R., Metzner C., Kailuweit P., Reuter D., Wieck A., Hübner M., Stufler S., Zrenner A., Malzer S., Döhler G.:
Fabrication of genuine single-quantum-dot light-emitting diodes
In: Applied Physics Letters 88 (2006), Article No.: 121115
ISSN: 0003-6951
DOI: 10.1063/1.2188057
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Döhler G., Renner F., Klar O., Eckardt M., Schwanhäußer A., Malzer S., Driscoll D., Hanson M., Gossard A., Loata g., Löffler T., Roskos H.:
THz-photomixer based on quasi-ballistic transport
In: Semiconductor Science and Technology 20 (2005)
ISSN: 0268-1242
DOI: 10.1088/0268-1242/20/7/007
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Elbing M., Ochs R., Koentopp M., Fischer M., von Hänisch C., Weigend F., Evers F., Weber HB., Mayor M.:
A single-molecular diode
In: Proceedings of the National Academy of Sciences of the United States of America 102 (2005), p. 8815-8820
ISSN: 0027-8424
DOI: 10.1073/pnas.0408888102
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Elbing M., Ochs R., Koentopp M., Fischer M., von Hänisch C., Weigend F., Evers F., Weber HB., Mayor M.:
A single-molecule diode
In: Proceedings of the National Academy of Sciences of the United States of America 102 (2005), p. 8815-8820
ISSN: 0027-8424
DOI: 10.1073/pnas.0408888102
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Malzer S., Steen C., Kiesel P., Dohler G.H.:
Determination of optical cross sections for electron and hole emission from deep defects in low-temperature-grown GaAs
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994037
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Kramer S., Neumann S., Prost W., Tegude F.J., Malzer S., Dohler G.H.:
Determination of piezo-electric fields in spontaneously ordered InGaAsP
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994022
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Kramer S., Neumann S., Prost W., Tegude F.J., Malzer S., Dohler G.H.:
Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsP
In: physica status solidi (a) 202 (2005), p. 992-996
ISSN: 1862-6300
DOI: 10.1002/pssa.200460716
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Winking L., Wenderoth M., Reusch T.C.G., Ulbrich R.G., Wilbrandt P.-J., Kirchheim R., Malzer S., Dohler G.:
Structural properties and electronic states of carbon delta-layers in GaAs
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994038
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Renner F.H., Klar O., Malzer S., Driscoll D., Hanson M., Gossard A.C., Loata G., Loffler T., Roskos H., Dohler G.H.:
The nipnip-THz-emitter: Photomixing based on ballistic transport
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (Flagstaff, AZ)
DOI: 10.1063/1.1994552
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Eckardt M., Betz M., Schwanhausser A., Trumm S., Sotier F., Robledo L., Malzer S., Muller T., Unterrainer K., Leitenstorfer A., Dohler G.H.:
THz collective oscillations of ballistic electrons in wide potential wells: Bridging classical transport with quantum dynamics
In: EPL - Europhysics Letters 70 (2005), p. 534-540
ISSN: 0295-5075
DOI: 10.1209/epl/i2005-10014-6
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Renner F., Eckardt M., Schwanhausser A., Klar O., Malzer S., Dohler G.H., Loata G., Loffler T., Roskos H., Hanson M., Driscoll D., Gossard A.C.:
THz-emitter based on ballistic transport in nano-pin diodes
In: physica status solidi (a) 202 (2005), p. 965-969
ISSN: 1862-6300
DOI: 10.1002/pssa.200460706
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Rambach M., Schmid F., Krieger M., Frey L., Bauer A., Pensl G., Ryssel H.:
Implantation and Annealing of Aluminum in 4H Silicon Carbide
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005), p. 68-71
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2005.04.079
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Beckmann D., Weber HB., von Löhneysen H.:
Dimensionality effects on nonequilibrium electronic transport in Cu nanobridges
In: Physical Review B 70 (2004)
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.70.033407
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Beckmann D., Weber HB., von Löhneysen H.:
Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures
In: Physical Review Letters 93 (2004)
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.93.197003
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Semmelroth Kurt, Krieger Michael, Pensl Gerhard, Nagasawa H., Püsche R., Hundhausen Martin, Ley Lothar, Nerding M., Strunk H. P.:
Growth of 3C-SiC Bulk Material by the Modified Lely-Method
In: Materials Science Forum 457-460 (2004), p. 151
ISSN: 0255-5476
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Pusep Yu.A., Ribeiro M.B., Arakaki H., De Souza C.A., Zanello P.A., Malzer S., Dohler G.H.:
Regimes of quantum transport in superlattices in a weak magnetic field
In: Journal of Physics: Condensed Matter 16 (2004), p. 2447-2453
ISSN: 0953-8984
DOI: 10.1088/0953-8984/16/13/022
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Mayor M., Weber HB.:
Statistical analysis of single-molecule junctions
In: Angewandte Chemie International Edition 43 (2004), p. 2882-2884
ISSN: 1433-7851
DOI: 10.1002/anie.200301733
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Oron M., Krupke R., Frank H., Weber HB., Beckmann D., von Löhneysen H., Kappes M.:
Simultaneous deposition of individual single-walled carbon nanotubes onto microelectrodes via AC-dielectrophoresis
In: H. Kuzmany (ed.): Electric Properties of Synthetic Nanostructures : XVII International Winterschool/Euroconference on Electronic Properties of Novel Materials (IWEPNM 2004),, AIP, 2004, p. 561-564
DOI: 10.1063/1.1812151
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Krupke R., Frank H., Weber HB., Beckmann D., Hampe O., Malik S., Kappes M., von Löhneysen H.:
Contacting single bundles of carbon nanotubes with alternating electric fields
In: Applied Physics A-Materials Science & Processing 76 (2003), p. 397-400
ISSN: 0947-8396
DOI: 10.1007/s00339-002-1592-4
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Krupke R., Frank H., Weber HB., Kappes M., von Löhneysen H.:
Simultaneous deposition of metallic bundles of single-walled carbon nanotubes using ac-dielectrophoresis
In: Nano Letters 3 (2003), p. 1019-1023
ISSN: 1530-6984
DOI: 10.1021/nl0342343
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Mayor M., Weber HB., Reichert J., Elbing M., von Hänisch C., Beckmann D., Fischer M.:
Electric current through a molecular rod - Relevance of the position of the anchor groups
In: Angewandte Chemie International Edition 42 (2003), p. 5834-5838
ISSN: 1433-7851
DOI: 10.1002/anie.200352179
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Reichert J., Weber HB., Mayor M., von Löhneysen H.:
Low-temperature conductance measurements on single molecules
In: Applied Physics Letters 82 (2003), p. 4137-4139
ISSN: 0003-6951
DOI: 10.1063/1.1574844
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Krupke R., Malik S., Weber HB., Hampe O., Kappes M., von Löhneysen H.:
Patterning and visualizing self-assembled monolayers with low-energy electrons
In: Nano Letters 2 (2002), p. 1161-1164
ISSN: 1530-6984
DOI: 10.1021/nl025679e
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Mayor M., Weber HB.:
Molecular electronics - Integration of single molecules in electronic circuits
In: Chimia 56 (2002), p. 494-499
ISSN: 0009-4293
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Mayor M., von Hänisch C., Weber HB., Reichert J., Beckmann D.:
A trans-platinum(II) complex as a single-molecule insulator
In: Angewandte Chemie International Edition 41 (2002), p. 1183-+
ISSN: 1433-7851
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Reichert J., Ochs R., Beckmann D., Weber HB., Mayor M., von Löhneysen H.:
Driving Current through Single Organic Molecules
In: Physical Review Letters 88 (2002), p. 176804
ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.88.176804
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Weber HB., Reichert J., Weigend F., Ochs R., Beckmann D., Mayor M., Ahlrichs R., von Löhneysen H.:
Electronic transport through single conjugated molecules
In: Chemical Physics 281 (2002), p. 113-125
ISSN: 0301-0104
DOI: 10.1016/S0301-0104(02)00343-9
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