Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene

(Third Party Funds Single)

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Start date: April 1, 2017
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Funding source: Deutsche Forschungsgemeinschaft (DFG)
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Abstract

The proposal targets the simultaneous electrical and optical characterization of colour centers, in particular intrinsic defects, in Silicon carbide (SiC). For their targeted generation we develop a methodology that combines ion implantation and optimized annealing such that smallest defect concentrations underneath the SiC (0001) surface can be reached with the ultimate goal of access to single defects. The (0001) surface will be equipped with epitaxially grown electrodes, such that a space charge region results, in which the defect can be electrostatically controlled. In particular, one can fill or deplete the defect at will. In connection with our patented epitaxial monolithic SiC/Graphene transistors, we will further optimize the Drain-current Deep-Level Transient Spectroscopy with the goal of single-defect sensitivity in the electrical signal. Simultaneously, the transparent graphene electrodes allow optical access to the very same defect, on which we will perform spectroscopy in the visible and infrared spectral range. We expect via the combined electrical and optical control as well as the electrical and optical characterization at the very same colour center a deep understanding of the excitation spectra. This refined methodology of defect analysis has significant importance for electrical SiC device developments. It further offers an opportunity to build single-photon sources with electrical control in this powerful and mature material system, which paves the way, for example, for highly sensitive sensors.

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